| PART |
Description |
Maker |
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU121622BT-D4 HY5DU12822BT HY5DU12822BTP-H HY5D |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| V58C2256324SHUR4E V58C2256324SHUR6E V58C2256324SHU |
8M X 32 DDR DRAM, PBGA60 ROHS COMPLIANT, MO-233, FBGA-60
64M X 4 DDR DRAM, PBGA60
|
ProMOS Technologies, Inc.
PROMOS TECHNOLOGIES INC
|
| V59C1512804QBF37 |
64M X 8 DDR DRAM, 0.5 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| NT5DS64M8AF-6K |
64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
NANYA TECHNOLOGY CORP
|
| H5MS1G62MFP-L3M |
64M X 16 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66
256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HYI25D512160DE-6 HYI25D512160DT-6 HYI25D512160DF-6 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
32M X 16 DDR DRAM, 0.7 ns, PBGA60 PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
|
